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Toplam kayıt 4, listelenen: 1-4
Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer
(Springer, 2020)
A film of cobalt sulfate (CoSO4)-doped polyvinylpyrrolidone (PVP) blend was spin-coated on n-Si. Electrical measurements were conducted on the Au/n-Si structure with the CoSO4-PVP film sandwiched between them. The frequency ...
Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure
(Springer, 2019)
cadmium-zincoxide (CdZnO) interlayered metal-semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250W illumination at 100kHz, 500kHz and 1MHz frequencies, respectively. ...
Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method
(Elsevier Science, 2019)
HgS-PVA nanoparticles were obtained via a simple ultrasound-assisted method. The structural and morphological characteristics of the products were analyzed by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). ...
Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer
(Springer, 2018-10)
Current-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol-gel method, were examined in the range of 110-380 ...