Now showing items 1-4 of 4
Effectuality of Barrier Height Inhomogeneity on the Current-Voltage-Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer
Current-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol-gel method, were examined in the range of 110-380 ...
Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure
cadmium-zincoxide (CdZnO) interlayered metal-semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250W illumination at 100kHz, 500kHz and 1MHz frequencies, respectively. ...
Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method
(Elsevier Science, 2019)
HgS-PVA nanoparticles were obtained via a simple ultrasound-assisted method. The structural and morphological characteristics of the products were analyzed by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). ...
Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode
In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by ...