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dc.contributor.authorTaşçıoğlu, İlke
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2019-07-04T13:02:09Z
dc.date.available2019-07-04T13:02:09Z
dc.date.issued2019en_US
dc.identifier.citationTascioglu, I., Tan, S. O., & Altindal, S. (2019). Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure. Journal of Materials Science-Materials in Electronics, 30(12), 11536-11541. doi:10.1007/s10854-019-01509-4en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.urihttps://hdl.handle.net/20.500.12294/1555
dc.descriptionTaşçıoğlu, İlke (Arel Author)en_US
dc.description.abstractcadmium-zincoxide (CdZnO) interlayered metal-semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250W illumination at 100kHz, 500kHz and 1MHz frequencies, respectively. The effectuality of the frequency, applied voltage, illumination, and series resistance on the electrical parameters was discussed in detail. The increase in the frequency led to the decrement in capacitance and conductance and the increment in the illumination generally led to the increment in capacitance and conductance. An abnormal behavior was detected in the accumulation region of the C-V plots at 500kHz and 1MHz due to the inductive phenomenon of device. The effect of illumination intensity reduces the R-i values in the inversion region while enhances them in the depletion and accumulation region for 1MHz. Additionally, the series resistance values decrease with increasing frequency due to the specific dispersion of localized interface states. As a consequence of the experimental results, a remarkable interaction was realized between the electrical parameters and the illumination, frequency and applied biases.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.relation.isversionof10.1007/s10854-019-01509-4en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleFrequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structureen_US
dc.typearticleen_US
dc.relation.journalJournal of Materials Science-Materials in Electronicsen_US
dc.contributor.departmentMühendislik ve Mimarlık Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.identifier.volume30en_US
dc.identifier.issue12en_US
dc.identifier.startpage11536en_US
dc.identifier.endpage11541en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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